▎ 摘　　要

In recent years, the data traffic has grown exponentially and the forecasts indicate a huge market that could be addressed by optoelectronics. However, the processing capacity, space, and energy consumption of the available technology is a serious bottleneck for the exploitation of these markets. Graphene material is a new candidate using in optoelectronics' devices such as photodetector. The responsivity of Graphene photodetectors depends critically on the elevated temperature of the electronic subsystem upon photoexcitation. We performed in this study a multi layer Graphene/InGaAs /InAlAs/InAs Photodetector PIN simulation with Atlas under Silvaco tcad Tools using Graphene and high electronmobility II I-V materials. Our devices exhibit 100 GHz bandwidth with 40 ps transient reponse, (2.7 x 10-7 A) of photocurrent, high responsivity with value of 1.26A/W and a suitable efficiency eta of 95 % with reasonable rejection ration of Iilumination/Idark of 2 order of magnitude.