• 文献标题:   Electronic transport and layer engineering in multilayer graphene structures
  • 文献类型:   Article
  • 作  者:   WANG HM, WU YH, NI ZH, SHEN ZX
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951 EI 1077-3118
  • 通讯作者地址:   Natl Univ Singapore
  • 被引频次:   38
  • DOI:   10.1063/1.2840713
  • 出版年:   2008

▎ 摘  要

We demonstrate a reproducible layer engineering technique for multilayer graphene through controllable oxidation via a SiO2 capping layer. The oxidation method is able to reduce the thickness of few layer graphene to a single layer, as determined by a combination of contrast and Raman spectroscopies. We have also studied the electrical transport properties of graphene sheets with different thicknesses by focusing on their minimum conductivity. The average minimum conductivity of single layer graphene was found to be 0.3 x 4e(2)/h, while that of multilayer graphene consisting of n layers is approximately 1.2 x 4e(2)/h for n=2, 2.4 x 4e(2)/h for n=3, and 4ne(2)/h for n>3. The results suggest that the substrate plays an important role in determining the transport properties of thin graphene sheets with n < 3, while its influence is relatively small in thicker graphene sheets. (c) 2008 American Institute of Physics.