• 文献标题:   Ordered Semiconducting Nitrogen-Graphene Alloys
  • 文献类型:   Article
  • 作  者:   XIANG HJ, HUANG B, LI ZY, WEI SH, YANG JL, GONG XG
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW X
  • ISSN:   2160-3308
  • 通讯作者地址:   Fudan Univ
  • 被引频次:   66
  • DOI:   10.1103/PhysRevX.2.011003
  • 出版年:   2012

▎ 摘  要

The interaction between substitutional nitrogen atoms in graphene is studied by performing first-principles calculations. The effective nearest-neighbor interaction between nitrogen dopants is found to be highly repulsive because of the strong electrostatic repulsion between nitrogen atoms. This interaction prevents the full nitrogen-carbon phase separation in nitrogen-doped graphene. Interestingly, there are two relatively stable nitrogen-nitrogen pair configurations, whose stability can be attributed to the anisotropy in the charge redistribution induced by nitrogen doping. We reveal two stable, ordered, semiconducting N-doped graphene structures, C3N and C12N, through the cluster-expansion technique and particle-swarm optimization method. In particular, we show that C12N has a direct band gap of 0.98 eV. The heterojunctions between C12N and graphene nanoribbons might be a promising basis for organic solar cells.