• 文献标题:   Extreme ultraviolet induced defects on few-layer graphene
  • 文献类型:   Article
  • 作  者:   GAO A, RIZO PJ, ZOETHOUT E, SCACCABAROZZI L, LEE CJ, BANINE V, BIJKERK F
  • 作者关键词:  
  • 出版物名称:   JOURNAL OF APPLIED PHYSICS
  • ISSN:   0021-8979 EI 1089-7550
  • 通讯作者地址:   FOM Dutch Inst Fundamental Energy Res
  • 被引频次:   8
  • DOI:   10.1063/1.4817082
  • 出版年:   2013

▎ 摘  要

We use Raman spectroscopy to show that exposing few-layer graphene to extreme ultraviolet (EUV, 13.5 nm) radiation, i.e., relatively low photon energy, results in an increasing density of defects. Furthermore, exposure to EUV radiation in a H-2 background increases the graphene dosage sensitivity, due to reactions caused by the EUV induced hydrogen plasma. X-ray photoelectron spectroscopy results show that the sp(2) bonded carbon fraction decreases while the sp(3) bonded carbon and oxide fraction increases with exposure dose. Our experimental results confirm that even in reducing environment oxidation is still one of the main source of inducing defects. (C) 2013 AIP Publishing LLC.