• 文献标题:   Comparison Between Graphene and GaAs Quantized Hall Devices With a Dual Probe
  • 文献类型:   Article
  • 作  者:   PAYAGALA SU, RIGOSI AF, PANNA AR, POLLAROLO A, KRUSKOPF M, SCHLAMMINGER S, JARRETT DG, BROWN R, ELMQUIST RE, BROWN D, NEWELL DB
  • 作者关键词:   carrier density, cryogenic current comparator ccc, dualprobe assembly, epitaxial graphene, quantized hall resistance qhr
  • 出版物名称:   IEEE TRANSACTIONS ON INSTRUMENTATION MEASUREMENT
  • ISSN:   0018-9456 EI 1557-9662
  • 通讯作者地址:   Natl Inst Stand Technol
  • 被引频次:   0
  • DOI:   10.1109/TIM.2020.3004678
  • 出版年:   2020

▎ 摘  要

A graphene quantized Hall resistance (QHR) device fabricated at the National Institute of Standards and Technology, Gaithersburg, MD, USA, was measured alongside a GaAs QHR device fabricated by the National Research Council of Canada, Ottawa, ON, Canada, by comparing them to a 1-k Omega standard resistor using a cryogenic current comparator. The two devices were mounted in a custom developed dual probe that was then assessed for its viability as a suitable apparatus for precision measurements. The charge carrier density of the graphene device exhibited controllable tunability when annealed after Cr(CO)(3) functionalization. These initial measurement results suggest that making resistance comparisons is possible with a single- probe wired for two types of quantum standards-GaAs, the established material, and graphene - the newer material that may promote the development of more user-friendly equipment.