▎ 摘　　要

Two-dimensional (2D) beta-In(2)S(3)is a natural defective n-type semiconductor attracting considerable interest for its excellent photoelectronic performance. However, beta-In(2)S(3)based photodetectors exhibited a weak near-infrared photoresponse compared to visible wavelength in past reports. In this work, high-quality 2D beta-In(2)S(3)nanosheets were prepared by a space-confined chemical vapor deposition (CVD) method. Graphene/In(2)S(3)van der Waals heterostructures were constructed to realize an enhanced near-infrared photodetection performance by a series of transfer processes. The photodetectors based on graphene/In(2)S(3)van der Waals heterostructures through junction carrier separation exhibited a better infrared performance of high photoresponsivity (R-light) of 0.49 mA W-1, external quantum efficiency (EQE) of 0.07%, and detectivity (D*) of 3.05 x 10(7)jones using an 808 nm laser.