• 文献标题:   Electronic properties of graphene nanostructures
  • 文献类型:   Review
  • 作  者:   MOLITOR F, GUTTINGER J, STAMPFER C, DROSCHER S, JACOBSEN A, IHN T, ENSSLIN K
  • 作者关键词:  
  • 出版物名称:   JOURNAL OF PHYSICSCONDENSED MATTER
  • ISSN:   0953-8984 EI 1361-648X
  • 通讯作者地址:   ETH
  • 被引频次:   80
  • DOI:   10.1088/0953-8984/23/24/243201
  • 出版年:   2011

▎ 摘  要

In this review, recent developments in the fabrication and understanding of the electronic properties of graphene nanostructures are discussed. After a brief overview of the structure of graphene and the two-dimensional transport properties, the focus is put on graphene constrictions, quantum dots and double quantum dots. For constrictions with a width below 100 nm, the current through the constriction is strongly suppressed for a certain back gate voltage range, related to the so-called transport gap. This transport gap is due to the formation of localized puddles in the constriction, and its size depends strongly on the constriction width. Such constrictions can be used to confine charge carriers in quantum dots, leading to Coulomb blockade effects.