▎ 摘　　要

In this paper, we investigate a graphene nanoribbon FET (GNRFET) with locally embedded Stone-Wales (SW) defects near its drain contact. The simulation procedure is preformed via the self-consistent solution of the full 3-D Schrodinger and Poisson equations. Localized states induced by the SW defects are able to reduce ambipolar conduction and provide higher ON-OFF ratio and attenuated kink effect. Causing outgoing carriers decelerated in the channel, the use of such defected region in the GNRFET yields less vulnerability to hot-carrier degradation than its conventional counterpart. Our proposed structure also enhances the device transconductance, making it more appealing in high-frequency applications.