• 文献标题:   Enhanced Andreev reflection in Kekule-Y patterned graphene
  • 文献类型:   Article
  • 作  者:   ZENG W, SHEN R
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW B
  • ISSN:   2469-9950 EI 2469-9969
  • 通讯作者地址:  
  • 被引频次:   6
  • DOI:   10.1103/PhysRevB.104.075436
  • 出版年:   2021

▎ 摘  要

We theoretically investigate the electron-hole conversions in normal metal-superconductor junctions based on the Kekule-Y (Kek-Y) patterned graphene. It is shown that, in contrast to the Klein tunneling in the pristine graphene, the perfect Andreev reflection with almost unit efficiency can be extended to a large range of incident angles in the Kek-Y patterned graphene in single-Dirac cone phase with the bias voltage in the gap. The normalized zero-bias conductance is also obtained.