▎ 摘　　要

The electrically tunable magnetoresistance (MR) behavior of graphene-based devices at room temperature is becoming increasingly important in the development of continuously adjustable low-powerconsumption magnetoelectronic applications. Herein, we design and construct an in-plane graphene nanocrystalline (GNC) film/n-Si device and observe a nonlinear S-shaped I-V curve, which lead to an electrically tunable MR behavior at near-room temperature. The MR value decreases gradually as the applied current increases, offering a switching ability with maximum high-low MR ratio (MR @1 mA/MR @3 mA) of -105%. A high MR (which is linearly related to the magnetic field strength) of -62% at 300 K is achieved by regulating the GNC grain size from 4 to 10 nm. The large, electrically tunable linear MR at room temperature in GNC film/n-Si devices have intriguing prospects for the fabrication of low-powerconsumption sensitive logic and magnetic random-access memory MR devices. (c) 2022 Elsevier Ltd. All rights reserved.