▎ 摘　　要

S-graphene quantum dots (GQDs), N-GQDs, P-GQDs, and Cl-GQDs are prepared by a solution chemistry method and further incorporated with ZnxCd1-xSe by one-step hydrothermal method. In the previous study, ZnxCd1-xSe reached the optimal photoelectric performances at the Zn/Cd ratio of 0.9:0.1, so the Zn0.9Cd0.1Se were combined with doped GQDs (D-GQDs) to form Zn0.9Cd0.1Se/doped-GQDs. The influence of GQDs doped with different elements on the photoelectric properties of Zn0.9Cd0.1Se composites is discussed. Compared with pristine Zn0.9Cd0.1Se, Zn0.9Cd0.1Se/Cl-GQDs, and Zn0.9Cd0.1Se/P-GQDs can improve the photocurrent response and current intensity, therein, Zn0.9Cd0.1Se/Cl-GQDs reaches the lowest interfacial charge transfer resistance and the highest photocurrent response of 5.48 x 10(-6) A cm(-2). Mott-Schottky analysis shows that the fitting slope of Zn0.9Cd0.1Se/Cl-GQDs composites is significantly lower than that of Zn0.9Cd0.1Se/GQDs with other doped elements. The results indicate that Zn0.9Cd0.1Se/Cl-GQDs composites has the largest carrier density, which is beneficial to charge conduction.