▎ 摘　　要

In this work, three-terminal ballistic junctions, made of three-branch graphene nanoribbons (GNRs), are considered and simulated at the nanometric scale. The analysis is carried out by a scattering matrix approach, in a discrete formulation optimized for GNR devices. The ballisticity and the scattering properties of the junction contribute to the nonlinear behaviour, as, in fact, a sinusoidal voltage between two GNR branches results in a non-sinusoidal current at the third branch. The input-output characteristic is hardly predictable at the nanoscale, as it depends on several cooperating factors, namely the potential distribution and the geometry of the junction. Several numerical examples are shown to illustrate the above concepts.