• 文献标题:   Ultrasensitive and ultrathin phototransistors and photonic synapses using perovskite quantum dots grown from graphene lattice
  • 文献类型:   Article
  • 作  者:   PRADHAN B, DAS S, LI JX, CHOWDHURY F, CHERUSSERI J, PANDEY D, DEV D, KRISHNAPRASAD A, BARRIOS E, TOWERS A, GESQUIERE A, TETARD L, ROY T, THOMAS J
  • 作者关键词:  
  • 出版物名称:   SCIENCE ADVANCES
  • ISSN:   2375-2548
  • 通讯作者地址:   Univ Cent Florida
  • 被引频次:   11
  • DOI:   10.1126/sciadv.aay5225
  • 出版年:   2020

▎ 摘  要

Organic-inorganic halide perovskite quantum dots (PQDs) constitute an attractive class of materials for many opto-electronic applications. However, their charge transport properties are inferior to materials like graphene. On the other hand, the charge generation efficiency of graphene is too low to be used in many optoelectronic applications. Here, we demonstrate the development of ultrathin phototransistors and photonic synapses using a graphene-PQD (G-PQD) superstructure prepared by growing PQDs directly from a graphene lattice. We show that the G-PQDs superstructure synchronizes efficient charge generation and transport on a single platform. G-PQD phototransistors exhibit excellent responsivity of 1.4 x 10(8) AW(-1) and specific detectivity of 4.72 x 10(15) Jones at 430 nm. Moreover, the light-assisted memory effect of these superstructures enables photonic synaptic behavior, where neuromorphic computing is demonstrated by facial recognition with the assistance of machine learning. We anticipate that the G-PQD superstructures will bolster new directions in the development of highly efficient optoelectronic devices.