▎ 摘　　要

Graphene directly grown on dielectric substrates by chemical vapor deposition (CVD) or plasma-enhanced CVD (PECVD) usually suffers from poor crystalline quality and sometimes coexisting amorphous carbon. In this study, improved crystallinity of graphene is achieved by using a Faraday cage made of stainless steel mesh wire in PECVD. The Faraday cage can slow down the graphene growth rate significantly even at high temperature, which is essential for larger critical nucleus size, higher nucleation barrier, and better electrical properties. Raman spectrum investigation reveals better graphene quality grown with the Faraday cage. A hole mobility up to 109 cm(2)V(-1)s(-1) is obtained with a growth rate of 0.94 nm h(-1) at 650 degrees C.