• 文献标题:   Fabrication and Characterization of Large-Area, Semiconducting Nanoperforated Graphene Materials
  • 文献类型:   Article
  • 作  者:   KIM M, SAFRON NS, HAN E, ARNOLD MS, GOPALAN P
  • 作者关键词:   graphene, graphite, band gap, mobility gap, transistor, field effect, block copolymer, soft, lithography, nanopatterning, nanoperforaced, honeycomb, antidot, large area, nanomaterial
  • 出版物名称:   NANO LETTERS
  • ISSN:   1530-6984
  • 通讯作者地址:   Univ Wisconsin
  • 被引频次:   247
  • DOI:   10.1021/nl9032318
  • 出版年:   2010

▎ 摘  要

We demonstrate the fabrication of nanoperforated graphene materials with sub-20-nm features using cylinder-forming diblock copolymer templates across > 1 mm(2) areas. Hexagonal arrays of holes are etched into graphene membranes, and the remaining constrictions between holes interconnect forming a honeycomb structure. Quantum confinement. disorder, and localization effects modulate the electronic structure, opening an effective energy gap of 100 rneV in the nanopatterned material. The field-effect conductivity can be modulated by 40x (200x) at room temperature (T = 105 K) as a result, A room temperature hole mobility of 1 cm(2) V-1 s(-1) was measured in the fabricated nanoperforated graphene held effect transistors. This scalable strategy for modulating the electronic structure of graphene is expected to facilitate applications of graphene in electronics, optoelectronics, and sensing.