▎ 摘　　要

We report micro -Raman spectroscopy, high -resolution scanning electron microscopy (HR-SEM) and atomic force microscopy (AFM) investigation of changes in chemical vapor deposition grown single -layer graphene structure induced by extreme ultraviolet (EUV) irradiation. We found that the exposures at doses up to 200 mJ/cm2 result in the appearance of D and D' bands related to defects in the graphene lattice. The evolution of D and G band intensity ratio follows the first stage of amorphization trajectory, which indicates transformation of pristine graphene to nanocrystalline form. Raman mapping demonstrated that the defects are localized only within the EUV irradiated areas with a density controlled by the EUV dose.