▎ 摘　　要

The successful synthesis of large-area SnSe films on SiO2/Si substrate through vapor transport is reported. Based on this we fabricated photodetectors that exhibited a fast response from ultraviolet (UV) to near infrared (NIR) wavelengths. By decorating the SnSe film with graphene oxide quantum dots (GO QDs) the photocurrent and photoresponse time were enhanced significantly over the whole spectrum. Our results indicate that GO functionalised SnSe is a promising material for broadband photodetection. (C) 2018 Author(s).