▎ 摘　　要

Thermal decomposition of SiC at high temperature usually brings about excessively fast Si sublimation and a very rough surface. In order to fabricate high-quality homogeneous epitaxial graphene on a SiC(0001) substrate, highly reactive erbium atoms are employed in this work. Scanning tunneling microscopy and Raman spectroscopy have been utilized to investigate the modulations of Er atoms on graphitization evolution and structural defects for graphene after annealing durations. Experimental results show that Er atoms pre-deposited on clean substrates can definitely enhance the surface graphitization of SiC and make graphene grow in a controllable way. The existence of Er layer is believed to break Si-C bonds at low temperature and to decrease the Si sublimate rate. It is also demonstrated that Er atoms can modify the type of structural defects in graphene, and the areal density of flower defects increases to 1.22 x 10(12) cm(-2), quadrupling that in pristine graphene. This work puts forward a fabrication method for epitaxial graphene with flower defects in high density and will enlighten some future applications of graphene in nanoelectronics, electron energy filtering, and chemical catalysis. Published under an exclusive license by AIP Publishing.