• 文献标题:   Linear piezoresistive strain sensor based on graphene/g-C3N4/PDMS heterostructure
  • 文献类型:   Article
  • 作  者:   RIYAJUDDIN S, KUMAR S, GAUR SP, SUD A, MARUYAMA T, ALI ME, GHOSH K
  • 作者关键词:   piezoresistivity, strain sensor, graphene, gc3n4, density functional theory, bandstructure, gauge factor
  • 出版物名称:   NANOTECHNOLOGY
  • ISSN:   0957-4484 EI 1361-6528
  • 通讯作者地址:   Inst Nano Sci Technol
  • 被引频次:   3
  • DOI:   10.1088/1361-6528/ab7b88
  • 出版年:   2020

▎ 摘  要

Here we report a novel hybrid material consists of 2D graphitic carbon nitride (g-C3N4) and graphene heterostructure that exhibits piezoresistivity superior to graphene and potentially being used as a strain sensor. The g-C3N4 that contains periodically spaced triangular nanopores is used for improving the piezoresistivity of the sensor imparting change in the polarization upon application of strain. In this work, we have investigated graphene/g-C3N4 interfaced materials and quantified its piezoresistive effects through experimental analysis and density functional theory (DFT) based computational studies provide insights into the electronic structures of the hybrid interfaces. We have observed a linear response in electrical resistance for a wide range of uniaxial strains up to similar to 25%. The observed increase in resistance upon application of strain corroborates with our computational finding of strain-dependent band gap opening. Further, it has been realized that band-gap opening occurs exclusively in the graphitic layer of the composite materials under strain. However, the g-C3N4 bands remain intact at the interface. The linearity and a considerably small gauge factor (1.89) make graphene/g-C3N4 a promising heterostructure material unlike conventional metal gauge sensor in wide strain pressure sensor devices.