▎ 摘　　要

The negative fixed charge density contributed by graphene oxide is estimated as high as 6 x 10(12) cm(-2). Graphene oxide is therefore a promising candidate for Si solar cell passivation. However, the high-temperature steps for manufacturing commercial Si solar cells would change the composition of graphene oxide. Therefore, graphene oxide cannot be directly adopted by commercial PERC manufacturers with the high-temperature firing step after the rear passivation step. To suppress the high-temperature degradation, we have deposited the graphene oxide on the rear surface of commercial IBC cells directly, and V-oc, J(sc) and efficiency of the cell all improved after 100 mu L graphene oxide deposition. Graphene oxide can be adopted as the passivation material of commercial cells as long as the high-temperature process on graphene oxide can be suppressed.