▎ 摘　　要

Using density functional theory and nonequilibrium Green's function (NEGF) formalism, we have theoretically investigated the magnetic and transport property of graphene by introducing dopant and defect. While the quasi-linear energy dispersion near the Dirac point remains and no magnetic property appears, graphene of p-type doping and n-type doping can be induced through doping with B and N atoms, respectively. It demonstrates that vacancy or metal doping can induce spontaneous magnetization. The current versus voltage simulation reveals device based on the N-doped graphene could have much higher conductance than that using pristine or B-doped graphene. (C) 2011 Elsevier B.V. All rights reserved.