• 文献标题:   Temperature dependent growth morphologies of parahexaphenyl on SiO2 supported exfoliated graphene
  • 文献类型:   Article
  • 作  者:   KRATZER M, KLIMA S, TEICHERT C, VASIC B, MATKOVIC A, RALEVIC U, GAJIC R
  • 作者关键词:  
  • 出版物名称:   JOURNAL OF VACUUM SCIENCE TECHNOLOGY B
  • ISSN:   2166-2746
  • 通讯作者地址:   Univ Leoben
  • 被引频次:   11
  • DOI:   10.1116/1.4813895
  • 出版年:   2013

▎ 摘  要

The growth of small conjugated molecules on graphene is of increasing interest, since the latter bears the potential to serve as a transparent electrode for organic solar cells and light emitting diodes. Here, parahexaphenyl thin films have been grown by hot wall epitaxy on SiO2 supported exfoliated graphene. The arising morphologies-studied by atomic force microscopy-exhibit a strong dependence on deposition temperature. At temperatures from 280 K-333 K, islands consisting of almost upright standing molecules and needles composed from lying molecules coexist on the graphene flake. Between 363 and 423 K solely needles-consisting of lying molecules-are present on the graphene. The needles form well-ordered networks with relative orientation angles of similar to 30 degrees, similar to 60 degrees, and similar to 90 degrees reflecting the symmetry of the graphene substrate. (C) 2013 American Vacuum Society.