▎ 摘　　要

The dependence of the spectroscopic and electrical transport characteristics of graphene grown by chemical vapor deposition on oxide-passivations was investigated. We found that in graphene transfer and transistor fabrication processes, Al2O3- and Cr2O3-passivations are effective to suppress the extrinsic p-type doping into graphene due to surface contamination. TiO2- and NiO-passivations are not suitable because p-d hybridization between graphene pi (p(z)) and metal (Ti or Ni) d orbitals occurs at the interfaces, resulting in deteriorated transport properties. (C) 2013 AIP Publishing LLC