▎ 摘　　要

We numerically study the quantum Hall effect in biased bilayer graphene based on a tight-binding model in the presence of disorder. Integer quantum Hall plateaus with quantized conductivity sigma(xy) = nu e(2)/h (where nu is an integer) are observed around the band center due to the split of the valley degeneracy by an opposite voltage bias added to the two layers. The central (n = 0) Dirac-Landau level is also split, which leads to a pronounced nu = 0 plateau. This is consistent with the opening of a sizable gap between the valence and conduction bands. The exact spectrum in an open system further reveals that there are no conducting edge states near zero energy, indicating an insulator state with zero conductance. Consequently, the resistivity should diverge at the Dirac point. Interestingly, the nu = 0 insulating state can be destroyed by disorder scattering with intermediate strength, where a metallic region is observed near zero energy. In the strong-disorder regime, the Hall plateaus with nonzero nu are destroyed due to the. oat-up of extended levels toward the band center and higher plateaus disappear first. Copyright (C) EPLA, 2009