▎ 摘　　要

The scheme and operational principles of the nanoelectromechanical memory cell based on the bending of a multi-layer graphene membrane by the electrostatic force are proposed. An analysis of the memory cell total energy as a function of the memory cell sizes is used to determine the sizes corresponding to a bistable memory cell with the conducting ON and non-conducting OFF states and to calculate the switching voltage between the OFF and ON states. It is shown that a potential barrier between the OFF and ON states is huge for practically all sizes of a bistable memory cell which excludes spontaneous switching and allows the proposed memory cell to be used for long-term archival storage. (C) 2016 Elsevier B.V. All rights reserved.