▎ 摘　　要

A high responsivity solar-blind deep ultraviolet self-powered photodetector (PD) based on a nitrogen-dopedgraphene(NGr)/beta-Ga2O3 microwire p-n heterojunction is reported. Under a 0 V bias and 235 nm (12.2 mu W/cm(2)) light irradiation, the PD shows a light/dark ratio of similar to 10(5) and a high responsivity of 360 mA/W. Compared with an intrinsic graphene (IGr)/beta-Ga2O3 heterostructure, the responsivity and light/dark ratio of the p-n heterojunction under a 0 V bias increases by 28 and 100 times, respectively. Under a-20 V bias, the p-n junction has a significantly low dark current of 1.7 pA, which is 100 times smaller than that of the IGr/beta-Ga2O3 device. This is mainly attributed to the increased built-in electric field between beta-Ga2O3 and NGr. The downwards shift of the Fermi level in NGr (compared to IGr) and the increased depletion region thicknessin beta-Ga2O3 result in the improved performance of the p-n heterojunction PD.