• 文献标题:   Diffusion of fluorine adatoms on doped graphene
  • 文献类型:   Article
  • 作  者:   GUZMANARELLANO RM, HERNANDEZNIEVES AD, BALSEIRO CA, USAJ G
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951 EI 1077-3118
  • 通讯作者地址:   CNEA
  • 被引频次:   10
  • DOI:   10.1063/1.4896511
  • 出版年:   2014

▎ 摘  要

We calculate the diffusion barrier of fluorine adatoms on doped graphene in the diluted limit using Density Functional Theory. We found that the barrier Delta strongly depends on the magnitude and character of the graphene's doping (delta n): it increases for hole doping (delta n < 0) and decreases for electron doping (delta n > 0). Near the neutrality point the functional dependence can be approximately by Delta = Delta(0) - alpha delta n, where alpha similar or equal to 6 x 10(-12) meV cm(2). This effect leads to significant changes of the diffusion constant with doping even at room temperature and could also affect the low temperature diffusion dynamics due to the presence of substrate induced charge puddles. In addition, this might open up the possibility to engineer the F dynamics on graphene by using local gates. (C) 2014 AIP Publishing LLC.