• 文献标题:   High sensitive quasi freestanding epitaxial graphene gas sensor on 6H-SiC
  • 文献类型:   Article
  • 作  者:   IEZHOKIN I, OFFERMANS P, BRONGERSMA SH, GIESBERS AJM, FLIPSE CFJ
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951 EI 1077-3118
  • 通讯作者地址:   Eindhoven Univ Technol
  • 被引频次:   11
  • DOI:   10.1063/1.4816762
  • 出版年:   2013

▎ 摘  要

We have measured the electrical response to NO2, N-2, NH3, and CO for epitaxial graphene and quasi freestanding epitaxial graphene on 6H-SiC substrates. Quasi freestanding epitaxial graphene shows a 6 fold increase in NO2 sensitivity compared to epitaxial graphene. Both samples show a sensitivity better than the experimentally limited 1 ppb. The strong increase in sensitivity of quasi freestanding epitaxial graphene can be explained by a Fermi-energy close to the Dirac point, leading to a strongly surface doping dependent sample resistance. Both sensors show a negligible sensitivity to N-2, NH3, and CO. (C) 2013 AIP Publishing LLC.