▎ 摘　　要

Epitaxial Chemical Vapor Deposition growth of graphene on silicon carbide is one of the most promising technologies to realize graphene-based electronics. Particularly, the quasi-free-standing bilayer which comes through hydrogen atom intercalation of monolayer graphene grown on the Si-face of SiC offers high carrier mobility (as high as 5000 [cm(2)/Vs]) and electrical stability throughout the device processing cycle. In this report, we present a statistical perspective on transport properties of QFS-bilayer graphene grown on 4H(0001) and 6H(0001) SiC, being a result of 460 individual processes on semi-insulating 10 mm x 10 mm substrates. The mutual relation between charge carrier concentration and mobility is determined and analyzed to raise the awareness of the effect of SiC hexagonality on charge transport in graphene. Special attention is paid to the applicability of quasi-free-standing bilayer graphene on SiC, primarily in magnetic field detection. The issue of the step-edge-induced offset voltage anisotropy in Hall effect sensors is introduced and a method to minimize it is presented. (C) 2015 Elsevier Ltd. All rights reserved.