▎ 摘　　要

A sensitive element for realizing the pressure sensing at high temperature is experimentally prepared using the microelectromechanical systems (MEMS) fabrication technology and consists of a 50-mu m-thick, 1400-mu m-wide square multilayer component membrane (including silicon, silicon dioxide, and silicon nitride) and a monolayer graphene with meander pattern. The prepared sample is characterized and analyzed using various techniques including atomic force microscopy, Raman spectroscopy, and the finite element method. The strain distribution in the pressed membrane is simulated by the finite element method. The pressure sensing based on the monolayer graphene with meander pattern can be realized according to the strain distribution and the high-temperature measurements for the sensitive element. Accordingly, a new pressure sensor based on the sensitive element is proposed for exploring the sensing performance depending on the piezoresistive property of monolayer graphene at high temperature. The sensing performance can be obtained by the theoretical analysis for electromechanical measurements at high temperature for the sensitive element. The results demonstrate that the performances of the sensor are excellent at high temperature. In particular, the sensitivity is much higher than that of previous high-temperature MEMS pressure sensors. Our results can provide insights for realizing the high-temperature applications of graphene in electronic devices.