▎ 摘　　要

We propose an approach to design efficient electronic switches based on Graphene/BN heterostructures. By means of atomistic Tight Binding simulations, we investigate heterostructures made of an armchair BN nanoribbon sided by two armchair graphene ribbons where a significant bandgap can be opened. In particular, we show that a bandgap of about 0.55 eV can be strongly suppressed by applying a relatively weak transverse electric field of 10 mV/A. Additionally, by using non-equilibrium Green's function simulation, we show that this effect can be used to control the current in electron devices even at small bias and small length. An on/off current ratio higher than 10(4) is achieved at room temperature. (C) 2014 AIP Publishing LLC.