• 文献标题:   Fractional quantum Hall effect in CVD-grown graphene
  • 文献类型:   Article
  • 作  者:   SCHMITZ M, OUAJ T, WINTER Z, RUBI K, WATANABE K, TANIGUCHI T, ZEITLER U, BESCHOTEN B, STAMPFER C
  • 作者关键词:   graphene, fractional quantum hall effect, cvd, magnetotransport, electronic propertie
  • 出版物名称:   2D MATERIALS
  • ISSN:   2053-1583
  • 通讯作者地址:   Rhein Westfal TH Aachen
  • 被引频次:   0
  • DOI:   10.1088/2053-1583/abae7b
  • 出版年:   2020

▎ 摘  要

We show the emergence of fractional quantum Hall states in graphene grown by chemical vapor deposition (CVD) for magnetic fields from below 3 T to 35 T where the CVD-graphene was dry-transferred. Effective composite-fermion filling factors up to nu* = 4 are visible and higher order composite-fermion states (with four flux quanta attached) start to emerge at the highest fields. Our results show that the quantum mobility of CVD-grown graphene is comparable to that of exfoliated graphene and, more specifically, that thep/3 fractional quantum Hall states have energy gaps of up to 30 K, well comparable to those observed in other silicon-gated devices based on exfoliated graphene.