• 文献标题:   Progress and control in development of single layer graphene membranes
  • 文献类型:   Article
  • 作  者:   TINCU B, AVRAM M, AVRAM A, TUTUNARU O, TUCUREANU V, MATEI A, BURINARU T, COMANESCU F, DEMETRESCU I
  • 作者关键词:   si/sio2 hole, suspended single layer graphene, chemical vapor deposition, scanning electron microscopy
  • 出版物名称:   VACUUM
  • ISSN:   0042-207X
  • 通讯作者地址:   IMT Bucharest
  • 被引频次:   0
  • DOI:   10.1016/j.vacuum.2020.109269
  • 出版年:   2020

▎ 摘  要

Recent approaches in graphene transfer on different substrates and nanostructured surfaces have opened up new potential applications such as: pressure sensors, separation membranes, electrochemical sensors. Graphene single layer is a promising membrane material, due to chemically inert, large specific surface area with hydrophobic property. In this work, single layer graphene have been synthesized by CVD on copper catalyst and transferred by three different wet chemical transfer methods on Si/SiO2 holes of approximatively 7 mu m diameter. The novelty of this study is the introduction of a vacuum step to help remove liquids from underneath the graphene layer while maintaining the structural integrity of the membrane. Raman spectroscopy was performed to analyze the number of layers and the quality of graphene. The morphology of the graphene transferred on the holes were examined using scanning electron microscopy (SEM).