• 文献标题:   Mask-free and programmable patterning of graphene by ultrafast laser direct writing
  • 文献类型:   Article
  • 作  者:   CHEN HY, HAN DD, TIAN Y, SHAO RQ, WEI S
  • 作者关键词:   carbon material, graphene oxide, patterning, ultrafast laser, raman
  • 出版物名称:   CHEMICAL PHYSICS
  • ISSN:   0301-0104 EI 1873-4421
  • 通讯作者地址:   Changchun Univ Technol
  • 被引频次:   21
  • DOI:   10.1016/j.chemphys.2013.12.005
  • 出版年:   2014

▎ 摘  要

Reported here is a mask-free and programmable patterning of graphene by using femtosecond laser direct writing on graphene oxide (GO) films. Take advantage of the ultrahigh instantaneous intensity of the femtosecond laser pulse, and especially its nonlinear interactions with materials, the GO could be efficiently reduced under atmospheric condition at room temperature. Moreover, the designability of femtosecond laser direct writing (FsLDW) technique allow making graphene micropatterns arbitrarily according to the preprogrammed structures, which provides the feasibility for rational design, flexible fabrication and integration of graphene-based micro-devices. Raman spectra show that the reduced and patterned region is very homogeneous, which is confirmed by the almost consistent ID/ IG ratio. The novel graphene patterning technique would provide a technical support for the development of graphene-based micro-devices for future electronics. (C) 2013 Elsevier B.V. All rights reserved.