• 文献标题:   Ballistic Electron Emission Microscopy Study of Charge Transport Across an Au/Graphene-Oxide/Modified-Si Stack
  • 文献类型:   Article
  • 作  者:   KAJEN RS, CHANDRASEKHAR N, NG MH, GOH SH, PEY KL, VIJILA C
  • 作者关键词:  
  • 出版物名称:   ECS SOLID STATE LETTERS
  • ISSN:   2162-8742
  • 通讯作者地址:   Inst Mat Sci Engn
  • 被引频次:   2
  • DOI:   10.1149/2.013202ssl
  • 出版年:   2012

▎ 摘  要

Ballistic electron emission microscopy/spectroscopy (BEEM/S), a three-terminal scanning tunneling microscopy (STM) technique is used to study charge transport across an Au/graphene-oxide/modified-silicon (Au/GO/m-Si) stack with nanoscale resolution. The Au/GO interface is found to be non-homogeneous with an average injection barrier of 1.0 eV for electrons and 0.5 eV for holes. These measurements will be useful for device design in the area of graphene-related electronics. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.013202ssl] All rights reserved.