▎ 摘　　要

A reversible resistive switching effect is detected in films created from the suspension of partially fluorinated graphene (more specifically, small graphene or few-layer graphene quantum dots in a fluorographene matrix), which makes them promising for resistive memory applications. This paper is focused on the investigation and comparison of the traps and transport in such films in both the low- and high-resistance state. The appearing set of traps for holes and electrons in the band gap of fluorinated graphene is revealed in the films at the low-resistance state, and their parameters (activation energy and trap density) are defined using charge spectroscopy. The minimum relaxation time of nonequilibrium carriers from different traps is found to be about 700 ns, and the energy level position of corresponding traps from the conduction band of a silicon substrate equals 0.08 eV. It has also been demonstrated that the carrier transport in the low-resistance state is determined by the same traps, and they form conductive channels in the film. Transport and non-equilibrium recharging processes in the state of high resistance are found to occur above all by means of carrier tunneling through the potential barriers in the films.