• 文献标题:   Tunable electron and hole doping in FeCl3 intercalated graphene
  • 文献类型:   Article
  • 作  者:   NATHANIEL J, WANG XQ
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951 EI 1077-3118
  • 通讯作者地址:   Clark Atlanta Univ
  • 被引频次:   8
  • DOI:   10.1063/1.4722817
  • 出版年:   2012

▎ 摘  要

We have studied the electronic characteristics of FeCl3 intercalated bilayer graphene under a perpendicularly applied electric bias. Evolution of the electronic structure of FeCl3 intercalated bilayer graphene as a function of the applied electric bias is performed using first-principles density-functional theory including interlayer van der Waals interactions. The calculation results demonstrate that the hole-doped graphene layers associated with the high electronegativity of FeCl3 transform into electron-doped layers tuned by the applied bias. The implications of controllable electronic structure of intercalated graphene for future device applications are discussed. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4722817]