• 文献标题:   Quantum Hall Effect and Quantum Point Contact in Bilayer-Patched Epitaxial Graphene
  • 文献类型:   Article
  • 作  者:   CHUA C, CONNOLLY M, LARTSEV A, YAGER T, LARAAVILA S, KUBATKIN S, KOPYLOV S, FAL KO V, YAKIMOVA R, PEARCE R, JANSSEN TJBM, TZALENCHUK A, SMITH CG
  • 作者关键词:   sic epitaxial graphene, quantum hall effect, scanning gate microscopy, monolayer bilayer graphene, resistance metrology, quantum point contact
  • 出版物名称:   NANO LETTERS
  • ISSN:   1530-6984 EI 1530-6992
  • 通讯作者地址:   Univ Cambridge
  • 被引频次:   25
  • DOI:   10.1021/nl5008757
  • 出版年:   2014

▎ 摘  要

We study an epitaxial graphene monolayer with bilayer inclusions via magnetotransport measurements and scanning gate microscopy at low temperatures. We find that bilayer inclusions can be metallic or insulating depending on the initial and gated carrier density. The metallic bilayers act as equipotential shorts for edge currents, while closely spaced insulating bilayers guide the flow of electrons in the monolayer constriction, which was locally gated using a scanning gate probe.