▎ 摘　　要

A method of graphene synthesis at a desired position on polymer substrates by laser irradiation has been studied. Polyethylene naphthalate films were used as substrates, on which a thin Ni film was deposited as a catalyst layer. The irradiation of a focused laser made a hole in the Ni film and the graphene was synthesized in the hole by the surface decomposition of the polymer. The laser power dependence of the hole radius was successfully explained by a dynamical model of thermodiffusion. The quality of the laser-synthesized graphene was studied by micro-Raman scattering. Typical ambipolar characteristics of the synthesized graphene were observed in field-effect transistors. We studied the application of the laser-synthesized graphene to strain sensors using the sensitivity of the electric conductance to the strain induced by the bending deformation of substrates. (C) 2017 The Japan Society of Applied Physics