▎ 摘　　要

Raman spectroscopy has been widely utilized to investigate the properties of graphene materials and defect effects due to external injection. We presented a detailed Raman spectroscopy study of boron-doped single-layer to six-layer graphene with three different concentrations of substitutional boron atoms as similar to 0.16 wt. %,similar to 0.48 wt. %, and similar to 0.76 wt. %. The Raman signatures of G, 2D, and defect-dependent modes were illustrated. The properties of these modes were revealed with enhanced boron contents and increased layer number. The behaviors of defect-dependent modes reached a plateau when boron content was larger than 0.48 wt. % to show the saturation of interaction between boron and carbon atoms. These modes upshifted with increasing layer number because boron defects in diff ;erent layers interacted with each other by the cascade quenching. Our study provides a detailed investigation of how boron doping changed the properties of graphene layers by defect effects. The results will induce great potential for applications in optoelectronic devices.