▎ 摘　　要

An experimental method is described in which a orderly 3D array of graphene sheets is grown to conform to the shape of an underlying nanowire (NW) substrate that remains on-site. The procedure uses a sacrificial nickel catalyst-based CVD growth process that is capable of producing graphene onto an insulating SiO2 substrate. Nano-imprint silicon NWs serve both as the scaffolding for the catalyst and as the final underlying substrate. The graphene is polycrystalline and multi-layered as expected from this nickel catalyzed growth method. This presents a novel and quick method that can be used to produce conductive graphene sheets in precise shapes and configurations seen in complex device applications but which are difficult to produce with current transfer methods. The geometry of the nanostructured substrate itself contributes to the on-site growth method by making it difficult for the graphene to wash off during wet etching. The SiNWs used in this research have increased surface area and a light trapping effect that, in combination with the graphene, can be used in future sensor and photovoltaic device applications.