• 文献标题:   Combined effects of hydrogen annealing on morphological, electrical and structural properties of graphene/r-sapphire
  • 文献类型:   Article
  • 作  者:   NING J, WANG D, YAN JD, HAN D, CHAI Z, CAI WW, ZHANG JC, HAO Y
  • 作者关键词:  
  • 出版物名称:   CARBON
  • ISSN:   0008-6223 EI 1873-3891
  • 通讯作者地址:   Xidian Univ
  • 被引频次:   10
  • DOI:   10.1016/j.carbon.2014.03.062
  • 出版年:   2014

▎ 摘  要

We proposed a comprehensive study on the combined effects of hydrogen thermal annealing process on the morphological, structural and electrical properties of graphene transferred on r-plane sapphire (1-102). We found that although thermal annealing can remove the polymeric residues, unintentional p-type doping of polymeric residues and structural breakages arise simultaneously with the in-plane tensile strain. Also, the forming mechanism of cracks and p-type doping effect were investigated through Raman spectroscopy, atomic force microscopy, non-contact Hall and high resolution X-ray photo-electron spectroscopy. It revealed thermal annealing process has a combined influence on the performance of the hydrogen annealed samples with a critical point, which was similar to 250 degrees C in this work. When the annealing temperature was over the critical point, significant p-type doping effects were included in a dominant position because of graphene with in-plane strain. The results can be important for the fabrication or chemical processing of graphene-based materials and devices. (C) 2014 Elsevier Ltd. All rights reserved.