▎ 摘　　要

The generation of second harmonic (SH) in the structure (SiO2/MnF2/graphene)(N)/ZrO2 has been investigated with the matrix transfer method. The theoretical simulation results show that the effect of the graphene (Gr) on SH outputs above or below the surface is obvious. The SH outputs compared with the same structure only without the Gr layer are greatly enhanced, even about two or three orders at some special cases. Also, the position and intensity of the SH outputs can be effectively tuned by an external magnetic field. An optimal structure is determined through investigating the effect of the Gr positions and dielectrics on the SH outputs. Finally, a critical cycle unit N = 8 is checked out, while the SH outputs begin to decrease once N > 8. These interesting results may be helpful to the development and utilization of nonlinear devices in the THz frequency field.