▎ 摘　　要

We use phenomenological modelling and detailed experimental studies of charge carrier transport to investigate the dependence of the electrical resistivity, rho, on gate voltage, V ( g ), for a series of monolayer graphene field effect transistors with mobilities, mu, ranging between 5000 and 250 000 cm(2) V-1 s(-1) at low-temperature. Our measurements over a wide range of temperatures from 4 to 400 K can be fitted by the universal relation mu=4/e delta nmax