• 文献标题:   Wafer-Scale Graphene Integrated Circuit
  • 文献类型:   Article
  • 作  者:   LIN YM, VALDESGARCIA A, HAN SJ, FARMER DB, MERIC I, SUN YN, WU YQ, DIMITRAKOPOULOS C, GRILL A, AVOURIS P, JENKINS KA
  • 作者关键词:  
  • 出版物名称:   SCIENCE
  • ISSN:   0036-8075 EI 1095-9203
  • 通讯作者地址:   IBM Thomas J Watson Res Ctr
  • 被引频次:   602
  • DOI:   10.1126/science.1204428
  • 出版年:   2011

▎ 摘  要

A wafer-scale graphene circuit was demonstrated in which all circuit components, including graphene field-effect transistor and inductors, were monolithically integrated on a single silicon carbide wafer. The integrated circuit operates as a broadband radio-frequency mixer at frequencies up to 10 gigahertz. These graphene circuits exhibit outstanding thermal stability with little reduction in performance (less than 1 decibel) between 300 and 400 kelvin. These results open up possibilities of achieving practical graphene technology with more complex functionality and performance.