▎ 摘　　要

In this paper, an optical modulator based on the hybrid structure is designed and analyzed in the wavelength range of 1.3 mu m-1.8 mu m. In this work, the proposed modulator consists of graphene, Molybdenum disulfide (MoS2), and Hexagonal Boron Nitride (h-BN) layers with Si layer on SiO2 substrate. The Si layer on SiO2 substrate has created a waveguide in the middle of the structure. Our investigations show that the strong coupling in this intermediate waveguide increases the light interaction with graphene, and finally increases the modulation depth (MD) of proposed modulator. In our proposed modulator, at telecommunication wavelength of 1.55 mu m, the modulation depth equals 0.2 dB/mu m, and the loss rate is 0.2 dB/mu m. The highest modulation depth is 0.58 dB/mu m, with loss of 0.58 dB/mu m and occurs at wavelength of 1.8 mu m.