• 文献标题:   High-Frequency Limits of Graphene Field-Effect Transistors with Velocity Saturation
  • 文献类型:   Article
  • 作  者:   WILMART Q, BOUKHICHA M, GRAEF H, MELE D, PALOMO J, ROSTICHER M, TANIGUCHI T, WATANABE K, BOUCHIAT V, BAUDIN E, BERROIR JM, BOCQUILLON E, FEVE G, PALLECCHI E, PLACAIS B
  • 作者关键词:   graphene transistor, velocity saturation, highfrequency, dirac pinchoff, contact gating
  • 出版物名称:   APPLIED SCIENCESBASEL
  • ISSN:  
  • 通讯作者地址:   Univ Paris Diderot
  • 被引频次:   3
  • DOI:   10.3390/app10020446
  • 出版年:   2020

▎ 摘  要

The current understanding of physical principles governing electronic transport in graphene field effect transistors (GFETs) has reached a level where we can model quite accurately device operation and predict intrinsic frequency limits of performance. In this work, we use this knowledge to analyze DC and RF transport properties of bottom-gated graphene on boron nitride field effect transistors exhibiting pronounced velocity saturation by substrate hyperbolic phonon polariton scattering, including Dirac pinch-off effect. We predict and demonstrate a maximum oscillation frequency exceeding 20 GHz. We discuss the intrinsic 0.1 THz limit of GFETs and envision plasma resonance transistors as an alternative for sub-THz narrow-band detection.