▎ 摘　　要

In this paper, we report on boron doped graphene synthesis using phenylboronic acid as a single source of carbon and boron. The growth conditions were established and optimized to improve the opto-electronic properties of a graphene film. The effects of the phenylboronic acid amount and growth time on the synthesis of graphene were investigated under similar growth conditions on polycrystalline copper foil in a three-zone CVD system. Based on Raman and XPS analysis, boron doped graphene was successfully synthesized under the given growth conditions in this study. It was also found that increasing the amount and growth times led to thicker graphene films. However, a single layer region was only found for a film grown using 0.5 gr phenylboronic acid along with 30-minute growth time, which is in contrast with the current literature. Additionally, carbon atoms were found to be substituted by the boron atoms in the honeycomb structure as revealed by the XPS measurements. Substitutional doping enables the doping to be stable for a long time, which is crucial for the doping to be employed in semiconducting technology particularly in optoelectronics. (C) 2020 Elsevier B.V. Allrightsreserved.