• 文献标题:   Influence of Dopant Loading on the Photo- and Electrochemical Properties of (N, O)-Co-doped Graphene
  • 文献类型:   Article
  • 作  者:   BALDOVI HG, ALBARRACIN F, ALVARO M, FERRER B, GARCIA H
  • 作者关键词:   doped graphene, conduction band potential, photochemistry, photoelectron spectroscopy, photophysical propertie
  • 出版物名称:   CHEMPHYSCHEM
  • ISSN:   1439-4235 EI 1439-7641
  • 通讯作者地址:   CSIC UPV
  • 被引频次:   4
  • DOI:   10.1002/cphc.201500306
  • 出版年:   2015

▎ 摘  要

A series of (N, O)-co-doped graphenes with different N and O loadings are prepared by the pyrolysis of natural chitosan. When the percentage of dopant increases, the conductionband potential and charge-separation quantum yield increase, whereas the charge-separation lifetime decreases.