▎ 摘　　要

We demonstrate a new electrode gate based on graphene ink for complementary printed organic metal oxide semiconductor (CMOS) technology on flexible plastic substrates. The goal is to replace the standard silver electrode gate. Devices made with graphene were enhanced and showed a high field-effect mobility of 3 cm(2) V-1 s(-1) for P-type and 0.9 cm(2) V-1 s(-1) for the N-type semiconductors. The improvement is attributed to the increase of the electrical capacitance of the organic dielectric (CYTOP) due to the graphene layer. A seven-stage ring oscillator was made with high oscillation frequencies of 2.1 kHz at 40 V corresponding to a delay/gate value of 34 mu s. These performances are promising for use of low cost printed electronic applications. (C) 2013 Elsevier B.V. All rights reserved.